Memory device and electronic device

ABSTRACT

Different embodiments of local redundancy decoder circuits that can be used in a memory device are disclosed. The different types of local redundancy decoder circuits are operably connected to the columns of memory cells in a memory array.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.16/509,178 filed on Jul. 11, 2019 and entitled “MEMORY DEVICE ANDELECTRONIC DEVICE” which application claims priority to U.S. ProvisionalApplication No. 62/698,640 entitled “MEMORY REDUNDANCY” filed on Jul.16, 2018, of which the entire disclosures are hereby incorporated byreference in their entirety.

BACKGROUND

Memory devices are typically provided as internal storage units incomputing or communication devices. In general, memory devices containan array of memory cells arranged in rows and columns for storing data,and row and column decoder circuits coupled to the array of memory cellsfor accessing the array of memory cells in response to an externaladdress. Each column of memory cells in the memory devices can beoperably connected to one or more bit lines for reading data from, andwriting data to, a memory cell designated by the external address.

In some instances, a memory cell in the memory array may fail or becomedefective. To address the possibility of a defective memory cell, amemory array is typically designed to include one or more rows andcolumns of redundant memory cells. The redundant memory cells areoperably connected to redundant column circuits and redundant rowcircuits. When a memory cell fails, or when a row line or a bit lineoperably connected to a memory cell fails, the column or row containingthe defective component is replaced with a redundant column or row ofmemory cells. However, some implementations of redundant column and/orrow circuits include the redundant circuits in every column or row,which can consume a significant amount of area in the memory device.Additionally or alternatively, the redundant column and/or row circuitsmay increase leakage of the memory device.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure will be readily understood by the following detaileddescription in conjunction with the accompanying drawings, wherein likereference numerals designate like structural elements, and in which:

FIG. 1 is a block diagram of an example memory device in accordance withsome embodiments;

FIG. 2 illustrates first local redundancy decoder circuitry inaccordance with some embodiments;

FIG. 3 depicts alternative second local redundancy decoder circuitry inaccordance with some embodiments;

FIG. 4 illustrates second local redundancy decoder circuitry inaccordance with some embodiments;

FIG. 5 illustrates third local redundancy decoder circuitry inaccordance with some embodiments;

FIG. 6 illustrates fourth local redundancy decoder circuitry inaccordance with some embodiments;

FIG. 7 illustrates fifth local redundancy decoder circuitry inaccordance with some embodiments;

FIG. 8A illustrates a block diagram of a first example decodercontroller operably connected to a set of local redundancy decoders inaccordance with some embodiments;

FIG. 8B depicts a block diagram of a second example decoder controlleroperably connected to a set of local redundancy decoders in accordancewith some embodiments;

FIG. 9 illustrates a first pre-decoder circuit in accordance with someembodiments;

FIG. 10 depicts a second pre-decoder circuit in accordance with someembodiments;

FIG. 11 illustrates a block diagram of an electronic device in whichaspects of the disclosure may be practiced in accordance with someembodiments;

FIG. 12 depicts an example system in which aspects of the disclosure maybe practiced in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper”, “forward”, “backward” and the like, may be used hereinfor ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

Embodiments described herein provide various local redundancy decoder(LRD) circuits for use in a memory device. Different types of LRDcircuits are operably connected to the columns of memory cells in amemory device. The LRD circuits are grouped into sets of multiple LRDcircuits. For example, in one embodiment, the LRD circuits are groupedinto sets of two LRD circuits. In another embodiment, the LRD circuitsare grouped into sets of four LRD circuits.

An output signal (a “HIT signal”) from one LRD circuit in one setripples to an immediately adjacent set and functions as an input signalin the immediately adjacent set. The ripple signal is used by theadjacent set in the decoding operation. Thus, embodiments describedherein provide a local decoder scheme that uses data (output signals)from an adjacent set when performing a decoding operation. Additionally,in some embodiments, a bit or bits in an input signal indicating whichcolumn is to be repaired is used as an input to a LRD circuit while atleast one remaining bit in the input signal is used as the input signal.The LRD circuits can be implemented with many different techniques forrepairing or compensating for a defective component in the memory array(e.g., a defective memory cell). Example techniques include, but notlimited to, thermal coding, binary coding, and global routing.

These and other embodiments are discussed below with reference to FIGS.1-12. However, those skilled in the art will readily appreciate that thedetailed description given herein with respect to these Figures is forexplanatory purposes only and should not be construed as limiting.

FIG. 1 is a block diagram of an example memory device in accordance withsome embodiments. The memory device 100 can be any suitable memorydevice. For example, in one embodiment, the memory device 100 is astatic random access memory (SRAM) device. In another non-limitingexample, the memory device is a dynamic random access memory (DRAM)device.

The memory device 100 includes a memory array 102, row circuitry 104operably connected to the memory array 102, and column circuitry 106operably connected to the memory array 102. The memory array 102includes memory cells 108 arranged in rows 110 and columns 112. In theillustrated embodiment, column 114 is a redundant column that includes acolumn of redundant memory cells 108.

The row circuitry 104 includes driver circuits 116, where each drivercircuit 116 is operably connected to one or more row lines (representedby row line 118). The column circuitry 106 includes column circuits 120that are each comprised of a LRD circuit 122 operably connected to aread/write (R/W) circuit 124. Each R/W circuit 124 is operably connectedto one or more bit lines. In the illustrated embodiment, each R/Wcircuit 124 is operably connected to a first bit line 126 (e.g., bl) anda second bit line 128 (e.g., blb). In the illustrated embodiment, theLRD circuit 122 and the R/W circuit 124 form a redundant column circuit130 that is operably connected to the redundant column 114. In someinstances, the redundant column circuits 130, including the LRD circuits122, can consume a large amount of area in the memory device 100 and/orincrease leakage of the memory device 100.

When a memory cell is defective (e.g., memory cell 132), the columncircuitry 106 may shift the sequence of columns to adjacent columncircuits 120, as shown by arrows 134 in FIG. 1. The columns that precedethe shift use the original column circuits to access the memory cells inthose columns (see e.g., arrow 136). In such situations, the LRDs 122are used to access the memory cells 108 in the shifted columns 106.

A processing unit 138 can be operably connected to the memory device 100and control some or all of the operations of the memory device 100. Forexample, the processing unit 138 may control the operations of the rowcircuitry 104, the column circuitry 106, and/or the LRD circuits 122. Inother embodiments, the processing unit 138 can be located in the memorydevice (in the integrated circuit or chip of the memory device 100). Anysuitable processing unit or units can be used. Example processing unitsinclude, but are not limited to, a microprocessor, an applicationspecific integrated circuit, and/or a field programmable gate array.

FIG. 8A illustrates a block diagram of a first example decodercontroller operably connected to a set of local redundancy decodercircuits in accordance with some embodiments. The decoder controller 800generates and provides input signals for two LRD circuits 802, 806,although other embodiments are not limited to this configuration. Thedecoder controller 800 can generate input signals for one or more LRDcircuits in other embodiments. Example decoder controllers include, butare not limited to, a microprocessor, an application specific integratedcircuit, and/or a field programmable gate array.

The LRD circuit 802 is in column 804 and the LRD circuit 806 is incolumn 808. The LRD circuits 802, 806 form a set 810. As will bedescribed in more detail later, one or more output signals from animmediately adjacent set is used as an input signal in the set 810.

The decoder controller 800 produces the input signals IN0-INm, IN0-INnbased on an input signal 812. The input signal 812 includes an N-bitinput signal that identifies which column is to be repaired (N equal toor greater than one). Each variable m, n is a number equal to or greaterthan zero. Thus, in some embodiments, a LRD circuit 802, 806 has oneinput signal (e.g., n=0) or multiple input signals. In one embodiment,the input signals are thermal code input signals or binary code inputsignals.

FIG. 8B depicts a block diagram of a second example decoder controlleroperably connected to a set of local redundancy decoder circuits inaccordance with some embodiments. The illustrated decoder controller 814generates and provides input signals for four LRD circuits 816, 820,824, 828. The decoder controller 814 can generate input signals for oneor more LRD circuits in other embodiments.

The LRD circuit 816 is in column 818, the LRD circuit 820 is in column822, the LRD circuit 824 is in column 826, and the LRD circuit 828 is incolumn 830. The LRD circuits 816, 820, 824, 828 form a set 832. Theinput signals IN0-INm, IN0-INn, IN0-INo, IN0-INp are produced based onan input signal 812. Each variable m, n, o, p is a number equal to orgreater than zero. Thus, in some embodiments, a LRD circuit 816, 820,824, 828 has one input signal (e.g., n=0) or multiple input signals.

The input signals IN0-INm, IN0-INn can be thermal code input signals orbinary code input signals. The input signals for thermal code can bebased on one or more groups of signals, and these groups are known asgroup A, group B, group C, etc. The input signals IN0-INm, IN0-INn,IN0-INo, IN0-INp can all be associated with one group (e.g., group A) orthe input signals may be a combination of signals from different groups(e.g., group A and group B). In some embodiments, which group or groupsis used can impact the structure of the LRD circuits (e.g., whichcomponents are used in the LRD circuits).

FIG. 2 illustrates first local redundancy decoder circuitry inaccordance with some embodiments. The first local redundancy decodercircuitry 200 is implemented as a thermal code local redundancy decodercircuitry. The input signals TC1-TC10 represent the thermal code inputsignals produced by a decoder controller (e.g., decoder controller 800in FIG. 8A). The first local redundancy decoder circuitry 200 can beimplemented with thermal code input signals TC1-TC10 associated with oneor more groups in thermal code (e.g., group A or a combination of groupsA and B). Those skilled in the art will recognize that which group orgroups is used is determined by the operation of the memory array andthe input signal to the decoder controller (e.g., 1 bit input signal, 2bit input signal, 3 bit input signal).

Each first local redundancy decoder circuitry 200 includes a first LRDcircuit 202 and a second LRD circuit 204. Each pair of first and secondLRD circuits 202, 204 form a set 205, 207, 209, and one or more LRDcircuit output signals (“HIT signals”) ripple forward and/or backward byone immediately adjacent set. The HIT signals indicate whether a columnis to be repaired. In a non-limiting embodiment, a column is identifiedas a repair when the HIT signal is a 1 and identified as a non-repairwhen the HIT signal is 0.

In the illustrated embodiment, the first LRD circuits 202 are located inalternating columns 206, 210, 214 (e.g., every other column) and thesecond LRD circuits 204 are positioned in alternating columns 208, 212,216. For example, a first LRD circuit 202 can be included in column 0,column 2, and column 4 (the even numbered columns) and a second LRDcircuit 204 may be included in column 1, column 3, and column 5 (the oddnumbered columns). Although only six columns are shown, otherembodiments can include any number of columns.

Each first LRD circuit 202 is a combinational logic circuit thatincludes two OR circuits and one NAND circuit. In the illustratedembodiment, the OR-NAND circuit structure includes a first transistor218, a second transistor 220, a third transistor 222, a fourthtransistor 224, a fifth transistor 226, and a sixth transistor 228operably connected in series between a voltage supply (e.g., VDD) and areference voltage (e.g., ground), a seventh transistor 229 operablyconnected between a node 230 (between the first and the secondtransistors 218, 220) and a node 232 (between the third and the fourthtransistors 222, 224), an eighth transistor 234 operably connectedbetween the voltage supply and node 232, a ninth transistor 236 operablyconnected between a node 238 (between the fourth and the fifthtransistors 224, 226) and the reference voltage, and a tenth transistor240 operably connected between a node 242 (between the fifth and thesixth transistors 226, 228) and the reference voltage. Two inverters244, 246 are connected in series between the node 232 and an output. Asshown in the example embodiment of FIG. 2, the first, second, third,seventh, and eighth transistors 218, 220, 222, 229, 234 are PMOStransistors and the fourth, fifth, sixth, ninth, and tenth transistors224, 226, 228, 236, 240 are NMOS transistors, although other embodimentsare not limited to this implementation.

The second LRD circuit 204 is also a combinational logic circuit thatincludes the output of an AND circuit 248 operably connected to a firstinput of a NOR circuit 250 and an inverter 252 operably connected to anoutput of the NOR circuit 250.

As shown in FIG. 2, an output signal (a “HIT signal”) in a set canripple to an immediately adjacent set and function as an input signal inthe immediately adjacent set. In this manner, the output signal from theimmediately adjacent set is used in a decoding operation. The LRDcircuits 202, 204 having an output signal that will ripple aredetermined based on which column is identified as a repair.

For example, when column 210 is to be repaired, the input IN of the ANDcircuit 248 in column 210 is 1 and the output signal HIT<1> in column214 will ripple to the input NEXT_HIT of the AND circuit 248 in the LRDcircuit 204 in column 212 (ripple represented by arrow 258). The term“NEXT_HIT” is used to indicate the input signal is an output signal froma succeeding LRD circuit (e.g., a LRD circuit to the right or a highernumbered column). Similarly, although not shown in FIG. 2, the outputsignal from the LRD circuit 202 in column 218 will ripple to theNEXT_HIT input of the NAND circuit 248 in column 216, the output signalfrom the LRD circuit 202 in column 222 will ripple to the NEXT_HIT inputof the NAND circuit 248 in column 220, and so on in the columns thatsucceed column 210 (succeeding columns indicated by ellipsis 260).

In the example embodiment shown in FIG. 2, an output signal from a LRDcircuit 202, 204 ripples forward as well, but this ripple is within aset 205, 207, 209. The output signal from a LRD circuit 202 ripples tothe LRD circuit 204 in the same set and functions as an input signal tothe NOR circuit 250. Thus, the output signal from a LRD circuit 202 isused by the LRD circuit 204 in a decoding operation. For example, whencolumn 210 is to be repaired, the output signal HIT<1> in column 210will ripple to the input PRE_HIT of the NOR circuit 250 in the LRDcircuit 204 in column 212 (ripple represented by arrow 256). The term“PRE_HIT” is used to indicate the input signal is an output signal froma preceding LRD circuit (e.g., a LRD circuit to the left or a lowernumbered column). Similarly, although not shown in FIG. 2, the outputsignal from the LRD circuit 202 in column 214 will ripple to the PRE_HITinput of the NOR circuit 250 in column 216, the output signal from theLRD circuit 202 in column 218 will ripple to the PRE_HIT input of theNOR circuit 250 in column 220, and so on in the columns that succeedcolumn 210.

FIG. 3 depicts an alternative first local redundancy decoder circuitryin accordance with some embodiments. When the total number of columns ina memory array is an odd number N, a LRD circuit is not included in thelast column N. For example, as shown in FIG. 3, a second LRD circuit 204is not implemented in column 310.

The different types of LRD circuits in FIGS. 2 and 3 include differentnumbers of components and/or types of components. For example, the firstLRD circuit 202 includes fourteen components (e.g., transistors) and thesecond LRD circuit 204 includes an AND circuit, a NOR circuit, and aninverter (or eight transistors).

FIG. 4 depicts second local redundancy decoder circuitry in accordancewith some embodiments. Each second local redundancy decoder circuitry400 includes a first LRD circuit 402 and a second LRD circuit 404. Eachpair of first and second LRD circuits 402, 404 form a set 405, 407, 409,and one or more output signals only ripple forward and/or backward to animmediately adjacent set. In the illustrated embodiment, the secondlocal redundancy decoder circuitry 400 is implemented as a binary codelocal redundancy decoder circuitry. As such, the input signals B1-B6represent the binary code input signals produced by a decoder controller(e.g., decoder controller 800 in FIG. 8A).

In the illustrated embodiment, the first LRD circuits 402 are located inalternating columns 406, 410, 414 (e.g., every other column) and thesecond LRD circuits 404 are positioned in alternating columns 408, 412,416. For example, a first LRD circuit 402 can be included in column 0,column 2, and column 4 (the even numbered columns) and a second LRDcircuit 404 may be included in column 1, column 3, and column 5 (the oddnumbered columns). Although only six columns are shown, otherembodiments can include any number of columns.

The first LRD circuit 402 is a combinational logic circuit that includesthe outputs of two NAND circuits 418, 420 input into a first NOR circuit422. The output of the first NOR circuit 422 is input to a first inputof a second NOR circuit 424. A PRE_HIT signal is input to the secondinput of the second NOR circuit 424. The output of the second NORcircuit 424 is an input into an inverter 426.

The second LRD circuit 404 includes the output of an AND circuit 428operably connected to a first input of a NOR circuit 430. An inverter432 operably connected to an output of the NOR circuit 430. The secondinput to the NOR circuit 430 is an output signal that has rippled from apreceding set (PRE_HIT).

As shown in FIG. 4, a first output signal HIT1 in a set can ripple backto an immediately adjacent set and function as an input signal in theimmediately adjacent set. In this manner, the output signal from theimmediately adjacent set is used in a decoding operation. Additionally,a second output signal within a set can ripple forward from the LRDcircuit 402 to the LRD circuit 404. The LRD circuits 402, 404 having anoutput signal that will ripple are determined based on which column isidentified as a repair.

For example, when column 412 is identified as a column to be repaired,the input signal IN of the AND circuit 428 in column 412 is 1 and theoutput signal HIT1 in the first LRD circuit 402 in column 410 ripplesforward and functions as the input signal PRE_HIT to the NOR circuit 430in the second LRD circuit 404 in column 412 (ripple represented by arrow434). Additionally, the output signal HIT1 in the first LRD circuit 402in column 414 ripples back and functions as the input signal NEXT_HIT tothe NAND circuit 428 in the second LRD circuit 404 in column 412 (ripplerepresented by arrow 436). Thus, the output signal HIT1 ripples forwardwithin a set (e.g., within set 407) and the output signal HIT1 ripplesbackward only one set (e.g., from set 409 to set 407).

Additionally, when column 412 is the column to be repaired, the outputsignal HIT1 from the LRD circuit 402 in column 414 will ripple to thePRE_HIT input of the NOR circuit 430 in column 416 (not shown), theoutput signal from the LRD circuit 402 in column 418 will ripple to thePRE_HIT input of the NOR circuit 430 in column 220 (not shown), and soon in the columns that succeed column 410 (succeeding columns indicatedby ellipsis 260). Similarly, although not shown in FIG. 4, the outputsignal HIT1 from the LRD circuit 402 in column 418 will ripple back tothe NEXT_HIT input of the NAND circuit 428 in column 416, the outputsignal HIT1 from the LRD circuit 402 in column 422 will ripple to theNEXT_HIT input of the NAND circuit 428 in column 420, and so on in thecolumns that succeed column 210.

The different types of LRD circuits in FIG. 4 include different numbersof components and/or types of components. For example, the first LRDcircuit 402 includes two NAND circuits, two NOR circuits, and aninverter and the second LRD circuit 404 includes an AND circuit, a NORcircuit, and an inverter.

In some embodiments, a code scheme is converted to a different codescheme. In a non-limiting example, a 3-8 thermal code scheme isconverted to a 2-4 thermal code scheme. A memory device can includefewer routing lines when the code scheme is converted from a highersignal code scheme (e.g., 3-8) to a lower signal code scheme (e.g.,2-4). Additionally or alternatively, the LRD circuits may be lesscomplex when the code scheme is converted from a higher signal codescheme (e.g., 3-8) to a lower signal code scheme.

In one embodiment, some of the bits in the input signal (e.g., inputsignal 812 in FIG. 8) are used as input signals in the LRD circuits andthe remaining bit(s) is used to convert the binary code or thermal codescheme to a different scheme. For example, with a three bit inputsignal, the least significant bit can be used as an input signal in aLRD circuit and the remaining two bits used to convert a 3-8 thermalcode scheme to a 2-4 thermal code scheme. Transitioning a bit in theinput signal to an input signal in a LRD circuit and scheme conversionare performed with pre-decoder circuits in some embodiments.

FIG. 9 illustrates a first pre-decoder circuit in accordance with someembodiments. The pre-decoder circuit 900 is configured to convert a 3-8code scheme to a 2-4 code scheme. Operation of the pre-decoder circuit900 is described in conjunction with a three bit thermal code inputsignal. The pre-decoder circuit 900 includes a first inverter 902 and aconverter circuit 904. The least significant bit of the three bit inputsignal is input into the inverter 902 and produces an output signalA_A1. As will be described in more detail in conjunction with FIG. 5,the output signal A_A1 is used as an input signal A_A1 in a LRD circuit.

The remaining two bits of the three bit input signal are input into theconverter circuit 904 and produce output signals A0, A1, A2, and A3. Thetwo remaining bits in the three bit input signal are used to convert the3-8 thermal code scheme to a 2-4 thermal code scheme that includes theoutput signals A0, A1, A2, and A3. In one embodiment, the pre-decodercircuit 900 is implemented in the decoder controller (e.g., decodercontroller 800 in FIG. 8A). In other embodiments, the pre-decodercircuit 900 is used with the binary code and the output signals A0, A1,A2, and A3 convert a 3-8 binary code scheme into a 2-4 binary codescheme.

FIG. 10 depicts a second pre-decoder circuit in accordance with someembodiments. The pre-decoder circuit 1000 is configured to convert a 3-8code scheme to a 1-2 code scheme. Operation of the pre-decoder circuit1000 is described in conjunction with a three bit thermal code inputsignal. The pre-decoder circuit includes a first inverter 1002, a secondinverter 1004, and a converter circuit 1006. The first least significantbit of the three bit input signal is input into the inverter 1002 andproduces an output signal A_A_A1. The second least significant bit ofthe three bit input signal is input into the inverter 1004 and producesan output signal A_A1. As will be described in more detail later inconjunction with FIG. 6, the output signals A_A1 and A_A_A1 are used asinput signals A_A1 and A_A_A1 in several LRD circuits.

The remaining bit of the three bit input signal is input into theconverter circuit 1006 and produces output signal A0. The remaining bitin the three bit input signal is used to convert the 3-8 thermal codescheme to a 1-2 thermal code scheme that includes the output signal A0.In one embodiment, the pre-decoder circuit 1000 is implemented in thedecoder controller (e.g., decoder controller 814 in FIG. 8B). In otherembodiments, the pre-decoder circuit 1000 is used with the binary codeand the output signals A0, A1, A2, and A3 convert a 3-8 binary codescheme into a 3-6 binary code scheme.

FIG. 5 depicts third local redundancy decoder circuitry in accordancewith some embodiments. The FIG. 5 embodiment uses thermal coding andrepresents the LRD circuits and input signals when the 3-8 thermal codescheme is converted to a 2-4 thermal code scheme. Additionally, one ofthe output signals is used as an input signal in a LRD circuit. In theillustrated embodiment, the thermal code scheme is converted from a 3-8thermal code scheme to a 2-4 thermal code scheme.

The input signals TC1-TC10 represent the thermal code input signalsproduced by a decoder controller (e.g., decoder controller 800 in FIG.8A). The local redundancy decoder circuitry 500 can be implemented withinput signals TC1-TC10 associated with one or more groups in thermalcode (e.g., group A or a combination of groups A and B). Those skilledin the art will recognize that which group or groups is used isdetermined by the operation of the memory array and the input signal tothe decoder controller (e.g., 1 bit input signal, 2 bit input signal, 3bit input signal).

The third local redundancy decoder circuitry 500 includes a first LRDcircuit 502 in column 504 and a second LRD circuit 506 in column 508.The first and the second LRD circuits 502, 506 form a set 510. Althoughonly one complete set 510 is shown in FIG. 5, embodiments can includeany number of sets (represented by ellipsis 260). For example, a secondset 509 of the first and the second LRD circuits 502, 506 can beimmediately adjacent the set 510 (only the second LRD circuit 506 in set509 is shown in FIG. 5). One or more output signals of a LRD circuit502, 506 in a set ripple forward and/or backward by only one immediatelyadjacent set and function as an input signal in the immediately adjacentset.

In some embodiments, the first LRD circuit 502 can be located inalternating columns (e.g., every other column) and the second LRDcircuit 506 may be positioned in alternating columns. For example, thefirst LRD circuit 502 can be included in column 0, column 2, and column4 (the even numbered columns) and the second LRD circuit 506 may beincluded in column 1, column 3, and column 5 (the odd numbered columns).Although only three columns are shown in FIG. 5, other embodiments caninclude any number of columns.

The first LRD circuit 502 is a combinational logic circuit that includesa first transistor 518, a second transistor 520, a third transistor 522,a fourth transistor 524, a fifth transistor 526, and a sixth transistor528 operably connected in series between a voltage supply (e.g., VDD)and a reference voltage (e.g., ground), a seventh transistor 529operably connected between the node 530 (between the first and thesecond transistors 518, 520) and the node 532 (between the third and thefourth transistors 522, 524), an eighth transistor 534 operablyconnected between the voltage supply and node 532, a ninth transistor536 operably connected between a node 538 (between the fourth and thefifth transistors 524, 526) and the reference voltage, and a tenthtransistor 540 operably connected between a node 542 (between the fifthand the sixth transistors 526, 528) and the reference voltage. The THOsignal at node 532 is a first input to NAND circuit 544. The signal THOrepresents a common signal (the same signal) that is in both LRDcircuits 502, 506. The second input to NAND circuit 544 is an output ofthe OR circuit 546. The first input to the OR circuit 546 is a PRE_HITsignal and the second input to the OR circuit 546 is an A_A1 signal. Asdescribed previously, the A_A1 signal is an inverted signal of the leastsignificant bit of the original three bit input signal (input intopre-decoder circuit 900 in FIG. 9).

An inverter 548 is operably connected to the output of NAND circuit 544.As shown in the example embodiment of FIG. 5, the first, second, third,seventh, and eighth transistors 518, 520, 522, 529, 534 are PMOStransistors and the fourth, fifth, sixth, ninth, and tenth transistors524, 526, 528, 536, 540 are NMOS transistors, although other embodimentsare not limited to this configuration.

The second LRD circuit 506 is a combinational logic circuit thatincludes two inverters 550, 552 operably connected in series. As shownin FIG. 5, an output signal in a set can ripple forward to animmediately adjacent set. For example, when column 504 is identified asa column to be repaired, the output signal HIT1 in the second LRDcircuit 506 in the set 509 can ripple forward and function as thePRE_HIT input signal to the OR circuit 546 in the LRD circuit 502 incolumn 504 of the set 510 (ripple represented by arrow 554).

The output signals HIT1 in the second LRD circuits 506 in the columnsthat succeed the column 504 also ripple to corresponding immediatelyadjacent sets. For example, the output signal HIT1 in the second LRDcircuit 506 in the succeeding set 512 ripples forward and functions asthe PRE_HIT input signal to the OR circuit 546 in the LRD circuit 502 inthe succeeding set 514 (not shown in FIG. 5).

The different types of LRD circuits in FIG. 5 include different numbersof components and/or types of components. For example, the first LRDcircuit 502 includes multiple PMOS and NMOS transistors, an OR circuit,a NAND circuit, and an inverter (e.g., eighteen transistors), and thesecond LRD circuit 506 includes two inverters (e.g., four transistors).

FIG. 6 illustrates fourth local redundancy decoder circuitry inaccordance with some embodiments. The FIG. 6 embodiment uses thermalcoding and represents the LRD circuits and input signals when the 3-8thermal code scheme is converted to a 1-2 thermal code scheme. The firstleast significant bit (LSB) (e.g., A_A_A1) and the second LSB (e.g.,A_A1) of the original three bit input signal are used as inputs in thelocal redundancy decoder circuitry (see e.g., FIG. 10).

The fourth local redundancy decoder circuitry 600 includes a first LRDcircuit 602 in column 604, a second LRD circuit 606 in column 608, athird LRD circuit 610 in column 612, and a fourth LRD circuit 614 incolumn 616. The first, second, third, and fourth LRD circuits 602, 606,610, 612 form a set 618. Although only one set is shown, embodiments caninclude any number of sets (indicated by ellipsis 260). One or moreoutput signals from a LRD decoder ripple forward and/or backward only byone immediately adjacent set and function as input signals in theimmediately adjacent set.

In some embodiments, the first, second, third, and fourth LRD circuits602, 606, 610, 614 can be located in every 4^(th) column. For example,the first LRD circuit 602 can be included in column 0, column 4, andcolumn 8, the second LRD circuit 606 may be positioned in column 1,column 5, and column 9, the third LRD circuit 610 can be included incolumn 2, column 6, and column 10, and the fourth LRD circuit 614 may beincluded in column 3, column 7, and column 11. Although only fourcolumns are shown in FIG. 6, other embodiments can include any number ofcolumns.

The first LRD circuit 602 includes an output of an OR circuit 622operably connected to a first input of a NAND circuit 624. The firstinput signal to the OR circuit 622 is a PRE_HIT signal and the secondinput to the OR circuit 622 is a signal A_A_A1. An inverter 626 isoperably connected to the output of NAND circuit 624. As describedpreviously, the A_A_A1 signal is an inverted signal of the first LSB ofthe original input signal (e.g., see FIG. 10).

The components in the second LRD circuit 606 are the same as thecomponents in the first LRD circuit 502 in FIG. 5. However, some of thesignals in the second LRD circuit 606 are different from the signals inthe first LRD circuit 502. The signal PRE_HIT is input to the firstinput of the OR circuit 546 and the signal A_A1 is input to the secondinput of the OR circuit 546. In the illustrated embodiment, the A_A1signal is an inverted signal of the second LSB of the original three bitinput signal (e.g., see FIG. 10).

The components in the third LRD circuit 610 are the same as thecomponents in the first LRD circuit 602. The components in the fourthLRD circuit 614 are the same as the components in the second LRD circuit506 in FIG. 5.

As shown in FIG. 6, an output signal in a set can ripple forward to animmediately adjacent set and function as an input signal in thatimmediately adjacent set. For example, the output signal HIT4 in thefourth LRD circuit 614 in an immediately adjacent set (complete set notshown at top of 600) can ripple forward as the input signal PRE_HIT tothe OR circuit 622 in the first LRD circuit 602, as the input signalPRE_HIT to the OR circuit 546 in the second LRD circuit 606, and as theinput signal PRE_HIT to the OR circuit 622 in the third LRD circuit 610(ripple represented by arrows 628). Additionally, the A_A1 input to theOR circuit 546 in the second LRD circuit 606 is an inverted first LSBbit of a 3-input of a group (e.g., the A group) in the thermal codingsignals. The A_A_A1 input to the OR circuit 622 in the first and thethird LRD circuits 602, 610 is the inverted first LSB bit of theoriginal three bit input signal.

The different types of LRD circuits in FIG. 6 include different numbersof components and/or types of components. For example, the first LRDcircuit 602 includes an OR circuit, a NAND circuit, and an inverter(e.g., eight transistors), the second LRD circuit 606 includes multiplePMOS and NMOS transistors, an OR circuit, a NAND circuit, and aninverter (e.g., eighteen transistors), and the fourth LRD circuit 614includes two inverters (e.g., four transistors).

FIG. 7 depicts fifth local redundancy decoder circuitry in accordancewith some embodiments. The FIG. 7 embodiment uses binary coding signals,and the binary code scheme is converted from a 2-4 binary code scheme toa 1-2 binary code scheme. For example, the first LSB of the original twobit input signal is used as an input signal in the local redundancydecoder circuitry (e.g., using pre-decoder circuit 900 in FIG. 9).

A second LRD circuit 704 is included in column 700, a first LRD circuit702 is included in column 706, and the second LRD circuit 704 isincluded in column 708. The second LRD circuit 704 in column 700 is partof a first set 710 and the first and the second LRD circuits 702, 704 incolumns 706, 708, respectively, form a second set 712. One or moreoutput signals ripple forward and/or backward by only one immediatelyadjacent set and function as an input signal in the immediately adjacentset.

The components in the first LRD circuit 702 are the same as thecomponents in the first LRD circuit 402 in FIG. 4. The components in thesecond LRD circuit 704 are the same as the components in the first LRDcircuit 602 in FIG. 6. However, some of the signals in the first LRDcircuit 702 differ from the signals in the first LRD circuit 602. Theinput signal PRE_HIT is input to the first input of the OR circuit 622and the signal A_A1 is input into the second input of the OR circuit622. As described previously, the A_A1 signal is an inverted signal ofthe least significant bit of the original two bit input signal (e.g.,see FIG. 9).

As shown in FIG. 7, when the column 706 is identified as a repair, theoutput signal HIT2 in the second LRD circuit 704 in the set 710 canripple forward as the input signal PRE_HIT in the first LRD circuits 702in the column 706 of the immediately adjacent set 712 (ripplesrepresented by arrow 714).

The different types of LRD circuits in FIG. 7 include different numbersof components and/or types of components. For example, the first LRDcircuit 700 includes two NAND circuits, two NOR circuits, and aninverter and the second LRD circuit 704 includes an OR circuit, a NANDcircuit, and an inverter.

FIG. 11 depicts a block diagram of an electronic device with whichaspects of the disclosure may be practiced in accordance with someembodiments. In a basic configuration, the electronic device 1100 mayinclude at least one processing unit 1102 and at least one memory 1104.Any suitable processing unit or units can be used. Example processingunits include, but are not limited to, a microprocessor, an applicationspecific integrated circuit, and/or a field programmable gate array.

Depending on the configuration and type of the electronic device, thememory 1104 may comprise, but is not limited to, volatile storage (e.g.,random access memory), non-volatile storage (e.g., read-only memory),flash memory, or any combination of such memories. The memory 1104 mayinclude a number of program modules and data files, such as an operatingsystem 1106 for controlling the operation of the electronic device 1100,one or more program modules 1108 suitable for parsing received input,determining subject matter of received input, determining actionsassociated with the input and so on, and one or more other applications1110.

The electronic device 1100 may have additional features orfunctionality. For example, the electronic device 1100 may also includeadditional data storage devices (removable and/or non-removable) suchas, for example, magnetic disks, optical disks, or tape. Such additionalstorage is illustrated in FIG. 11 by a removable storage device 1112 anda non-removable storage device 1114.

The electronic device 1100 may also have one or more input device(s)1116 such as a keyboard, a trackpad, a mouse, a pen, a sound or voiceinput device, a touch, force and/or swipe input device, etc. The outputdevice(s) 1118 such as a display, speakers, a printer, etc. may also beincluded. The aforementioned devices are examples and others may beused. The electronic device 1100 may include one or more communicationdevices 1120 allowing communications with other electronic devices 1122.Examples of suitable communication devices 1120 include, but are notlimited to, cellular, IR, NFC, RF, and/or satellite transmitter,receiver, and/or transceiver circuitry, universal serial bus (USB),parallel, and/or serial ports.

The term computer-readable media as used herein may include computerstorage media. Computer storage media may include volatile andnonvolatile, removable and non-removable media implemented in any methodor technology for storage of information, such as computer readableinstructions, data structures, or program modules.

The memory 1104, the removable storage device 1112, and thenon-removable storage device 1114 are all computer storage mediaexamples (e.g., memory storage or memory device) that can includevarious combinations of the LRD circuits disclosed herein. Computerstorage media may include RAM, ROM, electrically erasable read-onlymemory (EEPROM), flash memory or other memory technology, CD-ROM,digital versatile disks (DVD) or other optical storage, magneticcassettes, magnetic tape, magnetic disk storage or other magneticstorage devices, or any other article of manufacture which can be usedto store information and which can be accessed by the electronic device1100. Any such computer storage media may be part of the electronicdevice 1100. Computer storage media does not include a carrier wave orother propagated or modulated data signal.

The components described in conjunction with the electronic device 1100may be suitable for any electronic device that includes one or morememory devices.

FIG. 12 is a block diagram illustrating a system in which aspects of thedisclosure may be practiced in accordance with some embodiments. Thesystem 1200 allows a first electronic device 1202 to communicate with asecond electronic device 1204. The first and the second electronicdevices 1202, 1204 can each transmit and receive signals via wired orwireless communication devices. In some embodiments, the first and thesecond electronic devices 1202, 1204 may each be a cellular phone, atablet computing device, or a mobile computing device. The first and thesecond electronic devices 1202, 1204 can each include the components, orbe connected to the components, that are shown associated with theelectronic device 1100 in FIG. 11.

The first and the second electronic devices 1202, 1204 are eachconfigured to access or communicate with one or more server computingdevices (represented by server computing device 1206) using one or morenetworks (represented by network 1208). The server computing device 1206can access or execute one or more applications (represented byapplication 1210) and/or one or more files (represented by file 1212)stored in one or more storage devices (represented by storage device1214). The server computing device can include the components, or beconnected to the components, that are shown associated with theelectronic device 1100 in FIG. 11.

Although FIGS. 2-7 have been described in conjunction with exampleoutput signals and input signals, additional or different output signalscan ripple to an immediately adjacent set of LRD decoders in otherembodiments, and/or different or additional input signals can receivethe rippled output signals. For example, in FIG. 6, an output signalHIT2 can ripple from an immediately adjacent set and function as aninput signal HIT2 to the NAND circuit 624 in the LRD circuit 602, or theoutput signal HIT2 in the LRD circuit 606 may function as the inputsignal HIT2 in the LRD circuit 602. Thus, embodiments are not limited tothe output signals and/or input signals discussed herein.

In one aspect, a memory device includes a first column of memory cellsand a second column of memory cells. A first local redundancy decodercircuit is operably connected to the first column of memory cells. Asecond local redundancy decoder circuit is operably connected to thesecond column of memory cells. The first local redundancy decodercircuit differs from the second local redundancy decoder circuit. Forexample, the number and/or type of components in the first localredundancy decoder circuit differs from the number and/or type ofcomponents in the second local redundancy decoder circuit.

In another aspect, an electronic device includes a processing unitoperably connected to a memory device. The memory device includes afirst column of memory cells and a second column of memory cellsimmediately adjacent the first column of memory cells. First localredundancy decoder circuitry is operably connected to the first and thesecond columns of memory cells. The first local redundancy decodercircuitry includes a first local redundancy decoder circuit and a secondlocal redundancy decoder circuit. The memory device further includes athird column of memory cells and a fourth column of memory cellsimmediately adjacent the third column of memory cells. Second localredundancy decoder circuitry is operably connected to the third and thefourth columns of memory cells. The second local redundancy decodercircuitry includes the first local redundancy decoder circuit and thesecond local redundancy decoder circuit. The first local redundancydecoder circuit differs from the second local redundancy decodercircuit. For example, the number and/or type of components in the firstlocal redundancy decoder circuit differs from the number and/or type ofcomponents in the second local redundancy decoder circuit.

In yet another aspect, a memory array includes a plurality of memorycells arranged in rows and columns and a first local redundancy decodercircuit is operably connected to a first subset of the columns in thememory array, where a respective first local redundancy decoder circuitis operably connected to every other column in the first subset. Asecond local redundancy decoder circuit is operably connected to asecond subset of the columns in the memory array, where a respectivesecond local redundancy decoder circuit is operably connected to everyother column in the second subset. The first and the second localredundancy decoder circuits alternate between the columns. A respectivefirst local redundancy decoder circuit and an immediately adjacentrespective second local redundancy decoder circuit form a set such thatthe memory array includes a plurality of sets. An output signal from thefirst or the second local redundancy decoder circuits only ripplesbetween immediately adjacent sets and functions as an input signal inthe immediately adjacent sets.

Aspects of the present disclosure, for example, are described above withreference to block diagrams and/or operational illustrations of methods,systems, and computer program products according to aspects of thedisclosure. The functions/acts noted in the blocks may occur out of theorder as shown in any flowchart. For example, two blocks shown insuccession may in fact be executed substantially concurrently or theblocks may sometimes be executed in the reverse order, depending uponthe functionality/acts involved.

The description and illustration of one or more aspects provided in thisapplication are not intended to limit or restrict the scope of thedisclosure as claimed in any way. The aspects, examples, and detailsprovided in this application are considered sufficient to conveypossession and enable others to make and use the best mode of claimeddisclosure. The claimed disclosure should not be construed as beinglimited to any aspect, example, or detail provided in this application.Regardless of whether shown and described in combination or separately,the various features (both structural and methodological) are intendedto be selectively included or omitted to produce an embodiment with aparticular set of features. Having been provided with the descriptionand illustration of the present application, one skilled in the art mayenvision variations, modifications, and alternate aspects falling withinthe spirit of the broader aspects of the general inventive conceptembodied in this application that do not depart from the broader scopeof the claimed disclosure.

1-20. (canceled)
 21. A memory device, comprising: a first column ofmemory cells; a second column of memory cells immediately adjacent thefirst column of memory cells; a third column of memory cells immediatelyadjacent the second column of memory cells; a first local redundancydecoder circuit operably connected to the first column of memory cells;a second local redundancy decoder circuit operably connected to thesecond column of memory cells, wherein the second local redundancydecoder circuit differs from the first local redundancy decoder circuit;and a third local redundancy decoder circuit operably connected to thethird column of memory cells, wherein the third local redundancy decodercircuit differs from the first and the second local redundancy decodercircuits.
 22. The memory device of claim 21, wherein a number ofcomponents in the first local redundancy decoder circuit differs from anumber of components in the second local redundancy decoder circuit. 23.The memory device of claim 22, wherein a number of components in thethird local redundancy decoder circuit differs from the number ofcomponents in the first local redundancy decoder circuit and the numberof components in the second local redundancy decoder circuit.
 24. Thememory device of claim 21, wherein an output signal from the first localredundancy decoder circuit is received as an input signal to the secondlocal redundancy decoder circuit.
 25. The memory device of claim 21,wherein an output signal from the first local redundancy decoder circuitis received as an input signal to the third local redundancy decodercircuit.
 26. The memory device of claim 21, wherein the first localredundancy decoder circuit comprises a first inverter circuit and asecond inverter circuit connected in series.
 27. The memory device ofclaim 21, wherein the second local redundancy decoder circuit comprises:an OR circuit; a NAND circuit; and an inverter circuit, wherein: anoutput of the OR circuit is connected to an input of the NAND circuit;and an output of the NAND circuit is connected to an input of theinverter circuit.
 28. The memory device of claim 21, wherein the thirdlocal redundancy decoder circuit comprises: a first transistor, a secondtransistor, a third transistor, a fourth transistor, a fifth transistor,and a sixth transistor connected in series between a voltage supply anda reference voltage; a seventh transistor connected to a first nodebetween the first and the second transistors and a second node betweenthe third and the fourth transistors; an eighth transistor connectedbetween the voltage supply and the second node; a ninth transistorconnected to a third node between the fourth and the fifth transistorsand the reference voltage; and a tenth transistor connected to a fourthnode between the fifth and the sixth transistors and the referencevoltage.
 29. An electronic device, comprising: a processing unit; and amemory device operably connected to the processing unit, the memorydevice comprising: a memory array comprising a plurality of memory cellsarranged in columns; a plurality of first local redundancy decodercircuits operably connected to a first subset of columns in the memoryarray, wherein a respective first local redundancy decoder circuit isoperably connected to a respective column in the first subset ofcolumns; a plurality of second local redundancy decoder circuitsoperably connected to a second subset of columns in the memory array,wherein a respective second local redundancy decoder circuit is operablyconnected to a respective column in the second subset of columns andeach column in the second subset of columns is separate from each columnin the first subset of columns; and a plurality of third localredundancy decoder circuits operably connected to a third subset ofcolumns in the memory array, wherein a respective third local redundancydecoder circuit is operably connected to a respective column in thethird subset of columns and each column in the third subset of columnsis separate from each column in the first and in the second subsets ofcolumns.
 30. The electronic device of claim 29, further comprises aplurality of fourth local redundancy decoder circuits operably connectedto a fourth subset of columns in the memory array, wherein a respectivefourth local redundancy decoder circuit is operably connected to arespective column in the fourth subset of columns and each column in thefourth subset of columns is separate from each column in the first, inthe second, and in the third subsets of columns.
 31. The electronicdevice of claim 30, wherein the columns in the first subset of columns,in the second subset of columns, in the third subset of columns, and inthe fourth subset of columns are interleaved such that a respectivecolumn in the first subset is immediately adjacent a respective columnin the second subset, the respective column in the second subset isimmediately adjacent a respective column in the third subset of columns,and the respective column in the fourth subset is immediately adjacent arespective column in the third subset of columns.
 32. The electronicdevice of claim 29, wherein a number of components in each first localredundancy decoder circuit in the plurality of first local redundancydecoder circuits differs from a number of components in each secondlocal redundancy decoder circuit in the plurality of second localredundancy decoder circuits.
 33. The electronic device of claim 29,wherein a number of components in each second local redundancy decodercircuit in the plurality of second local redundancy decoder circuitsdiffers from a number of components in each third local redundancydecoder circuit in the plurality of third local redundancy decodercircuits
 34. The electronic device of claim 29, further comprising apre-decoder circuit configured to convert a binary code scheme to adifferent binary code scheme using at least one bit of an N bit inputsignal, where N is a number equal to or greater than two and the atleast one bit does not equal N.
 35. The electronic device of claim 34,wherein each remaining bit in the N bit input signal is used as an inputsignal in the first and second sets.
 36. The electronic device of claim29, wherein each first local redundancy decoder circuit in the pluralityof first local redundancy decoder circuits comprises: an OR circuit; aNAND circuit; and an inverter circuit, where: an output of the ORcircuit is connected to an input of the NAND circuit; and an output ofthe NAND circuit is connected to an input of the inverter circuit. 37.The electronic device of claim 29, wherein each second local redundancydecoder circuit in the plurality of second local redundancy decodercircuits circuit comprises: a first transistor, a second transistor, athird transistor, a fourth transistor, a fifth transistor, and a sixthtransistor connected in series between a voltage supply and a referencevoltage; a seventh transistor connected to a first node between thefirst and the second transistors and a second node between the third andthe fourth transistors; an eighth transistor connected between thevoltage supply and the second node; a ninth transistor connected to athird node between the fourth and the fifth transistors and thereference voltage; and a tenth transistor connected to a fourth nodebetween the fifth and the sixth transistors and the reference voltage.38. The electronic device of claim 29, wherein each third localredundancy decoder circuit in the plurality of third local redundancydecoder circuits comprises a first inverter circuit and a secondinverter circuit connected in series.
 39. The electronic device of claim29, wherein: the first local redundancy decoder circuit, the secondlocal redundancy decoder circuit, and the third local redundancy decodercircuit comprise a first set; and an output signal from the first localredundancy decoder circuit, the second local redundancy decoder circuit,or the third local redundancy decoder circuit in the first set isreceived as an input signal to an immediately adjacent second set.
 40. Amemory device, comprising: a first local redundancy decoder circuitoperably connected to a first column of memory cells; a second localredundancy decoder circuit operably connected to a second column ofmemory cells; a third local redundancy decoder circuit operablyconnected to a third column of memory cells; and a fourth localredundancy decoder circuit operably connected to a fourth column ofmemory cells, wherein: the first local redundancy decoder circuit, thesecond local redundancy decoder circuit, the third local redundancydecoder circuit, and the fourth local redundancy decoder circuitcomprise a first set; and an output signal from the first localredundancy decoder circuit, the second local redundancy decoder circuit,the third local redundancy decoder circuit, or the fourth localredundancy decoder circuit in the first set is received as an inputsignal in an immediately adjacent second set.